Performance trade-offs in polysilicon source-gated transistors
نویسندگان
چکیده
منابع مشابه
Self-Heating Effects In Polysilicon Source Gated Transistors
Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the reverse-biased source barrier has a potentially high positive temperature coefficient, which may...
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The performance benefits of using source-gated transistors (SGTs) in analog large-area electronic circuits are examined practically and via numerical simulations. In current mirror circuits made using thin-film technology, significant advantages are observed for SGT implementations. A comparison of current mirrors implemented with standard field effect transistors (FETs) and SGTs shows that the...
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...................................................................................................................ii Declaration .............................................................................................................iii Acknowledgments ................................................................................................... iv List of publications .................
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Due to their fabrication simplicity, fully compatible with low-cost large-area device assembly strategies, source-gated transistors (SGTs) have received significant research attention in the area of high-performance electronics over large area low-cost substrates. While usually based on either amorphous or polycrystalline silicon (α-Si and poly-Si, respectively) thin-film technologies, the pres...
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ژورنال
عنوان ژورنال: Solid-State Electronics
سال: 2011
ISSN: 0038-1101
DOI: 10.1016/j.sse.2011.06.010